advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 40v single drive requirement r ds(on) 20m surface mount package i d 32a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =100 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-c thermal resistance junction-case max. 4.5 /w rthj-a thermal resistance junction-ambient max. 110 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 34.7 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.27 continuous drain current, v gs @ 10v 20 pulsed drain current 1 150 gate-source voltage continuous drain current, v gs @ 10v 32 parameter rating drain-source voltage 40 201028031 AP9962H/j 20 g d s g d s to-252(h) g d s to-251(j) the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. the to-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap9962j) are available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.1 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 20 m v gs =4.5v, i d =16a - - 30 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 19 - s i dss drain-source leakage current (t j =25 o c) v ds =40v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =32v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =20a - 13 21 nc q gs gate-source charge v ds =32v - 5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 8 - nc t d(on) turn-on delay time 2 v ds =20v - 8 - ns t r rise time i d =20a - 38 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 20 - ns t f fall time r d =1.0 -5- ns c iss input capacitance v gs =0v - 1170 1870 pf c oss output capacitance v ds =25v - 180 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =32a, v gs =0v - - 1.2 v t rr reverse recovery time i s =20a, v gs =0 v , - 24 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. AP9962H/j 20v 100
AP9962H/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =10v 0 20 40 60 80 100 120 140 012345678 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 6.0v 4.5v v g =3.0v 12 16 20 24 28 32 36 34567891011 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 o c 0 20 40 60 80 100 120 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =3.0v 10v 8.0v 6.0v 4.5v 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform AP9962H/j 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =20v v ds =25v v ds =32v i d =20a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 10 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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